Kidus Guye and Emils Jurcik represented the laboratory at the annual ASPIRE Conference, hosted at Nagoya University, where they presented their latest work on the thermal characterization of ultra- and wide-bandgap semiconductor devices. Their presentations highlighted ongoing efforts to understand near junction thermal management in next-generation power electronic materials. The ongoing work is funded by ARO and DARPA.

Kidus presented his work on near junction thermal management of novel device architectures within AlGaN semiconductor devices and Emils presented his work on the role of dopant engineering in the thermal management of AlN power electronic materials.

During the event, Kidus and Emils had the opportunity to interact with distinguished faculty and researchers, including Professor Samuel Graham and Nobel Prize laureate Professor Hiroshi Amano, a pioneer in wide-bandgap semiconductor technology.